FQS4901TF
MOSFET 2N-CH 400V 450MA 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi QFET® FQS4901TF is a dual N-channel MOSFET array designed for surface-mount applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 450mA at 25°C. The FQS4901TF offers a maximum power dissipation of 2W and is packaged in an 8-SOIC form factor. Key electrical parameters include a gate charge (Qg) of 7.5nC (max) at 10V and input capacitance (Ciss) of 210pF (max) at 25V. The on-resistance (Rds On) is specified at 4.2 Ohms (max) at 225mA and 10V. Operating temperature range is -55°C to 150°C. This device is commonly utilized in switching power supplies and power management solutions across various industrial sectors. The FQS4901TF is supplied in Tape & Reel packaging.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 450mA |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 225mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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