FDY4001CZ
MOSFET N/P-CH 20V 0.2A SOT563FManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi PowerTrench® FDY4001CZ is a MOSFET array featuring both N-channel and P-channel configurations within a SOT-563F package. This device offers a 20V drain-source breakdown voltage and supports continuous drain currents of 200mA for the N-channel and 150mA for the P-channel, respectively. Designed with logic-level gate functionality, it boasts a low gate charge of 1.1nC at 4.5V and an input capacitance of 60pF at 10V. The on-resistance is specified as 5 Ohms maximum at 200mA and 4.5V for the N-channel device. With a maximum power dissipation of 446mW, this component is suitable for surface-mount applications, operating across a temperature range of -55°C to 150°C. The technology employed is MOSFET (Metal Oxide). This array is commonly utilized in automotive and industrial control applications.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 446mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 200mA, 150mA |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-563F |
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