FDY4000CZ
MOSFET N/P-CH 20V 0.6A SOT563FManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDY4000CZ is a PowerTrench® MOSFET array featuring N-channel and P-channel configurations. This device offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 600mA for the N-channel and 350mA for the P-channel, respectively, at 25°C. Key electrical characteristics include a maximum Rds On of 700mOhm at 600mA and 4.5V, a logic level gate, and a maximum gate charge (Qg) of 1.1nC at 4.5V. The input capacitance (Ciss) is a maximum of 60pF at 10V. Packaged in a SOT-563F, this surface mount component dissipates a maximum of 446mW and operates within a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in portable electronics and power management.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 446mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 600mA, 350mA |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-563F |
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