FDY3001NZ
MOSFET 2N-CH 20V 0.2A SOT563FManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi PowerTrench® FDY3001NZ is a dual N-channel MOSFET array in a SOT-563F surface mount package. This component features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 200mA at 25°C. The device offers a low on-resistance (Rds On) of 5 Ohm maximum at 200mA, 4.5V Vgs. It incorporates a logic-level gate for compatibility with lower voltage control signals. Key parameters include a gate charge (Qg) of 1.1nC at 4.5V and an input capacitance (Ciss) of 60pF at 10V. The maximum power dissipation is 446mW. Operating temperature ranges from -55°C to 150°C. This MOSFET array is suitable for applications in consumer electronics and portable devices.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 446mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-563F |