FDY1002PZ-G
MOSFET 2P-CH 20V 0.83A SOT563Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDY1002PZ-G is a PowerTrench® MOSFET array featuring two P-channel transistors in a SOT-563 package. This device offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 830mA at 25°C. Key specifications include a low on-resistance (Rds On) of 500mOhm at 830mA and 4.5V, a gate charge (Qg) of 3.1nC maximum at 4.5V, and input capacitance (Ciss) of 135pF maximum at 10V. The logic level gate feature enhances its compatibility with lower voltage control signals. With a maximum power dissipation of 446mW, this MOSFET array is suited for applications in consumer electronics and power management. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 446mW (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 830mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 135pF @ 10V |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 830mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
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