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FDWS9520L-F085

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FDWS9520L-F085

MOSFET 2P-CH 40V 60.8A 8PQFN

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The onsemi FDWS9520L-F085 is a dual P-channel MOSFET array designed for automotive applications. This device features a 40V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of up to 60.8A (Tc) at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 12.5mOhm at 20A and 10V, with a maximum power dissipation of 75W (Tc). Key parameters include a gate charge (Qg) of 33nC (Max) at 10V and an input capacitance (Ciss) of 2370pF (Max) at 20V. The threshold voltage (Vgs(th)) is 3V (Max) at 250µA. This component is qualified to AEC-Q101 standards and is supplied in an 8-PQFN (5x6) surface mount package on tape and reel. Its robust design makes it suitable for demanding automotive power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max75W (Tc)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2370pF @ 20V
Rds On (Max) @ Id, Vgs12.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-PQFN (5x6)
GradeAutomotive
QualificationAEC-Q101

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