FDW2601NZ
MOSFET 2N-CH 30V 8.2A 8TSSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDW2601NZ is a dual N-channel MOSFET array designed for efficient power management applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 8.2A at 25°C. The low on-resistance (Rds On) of 15mOhm at 8.2A and 4.5V, coupled with a logic level gate, ensures optimal performance in battery-powered systems and power switching. With a maximum power dissipation of 1.6W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for demanding environments. The 8-TSSOP package, supplied on tape and reel, facilitates surface mounting and integration into compact designs. Key parameters include a gate charge (Qg) of 30nC at 4.5V and input capacitance (Ciss) of 1840pF at 15V. This component is widely utilized in consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 15V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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