FDW2511NZ
MOSFET 2N-CH 20V 7.1A 8TSSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDW2511NZ is a dual N-channel MOSFET array packaged in an 8-TSSOP. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 7.1A at 25°C, with a maximum power dissipation of 1.6W. The MOSFET array offers a low Rds(on) of 20mOhm at 7.1A and 4.5V, and a logic-level gate for enhanced drive efficiency. Key electrical characteristics include a gate charge (Qg) of 17.3nC (max) at 4.5V and an input capacitance (Ciss) of 1000pF (max) at 10V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management, battery charging, and portable electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17.3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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