FDW2508PB
MOSFET 2P-CH 12V 6A 8TSSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDW2508PB is a PowerTrench® series MOSFET array featuring two P-channel devices in a single 8-TSSOP package. This component is designed for surface mount applications and operates with a drain-to-source voltage (Vdss) of 12V and a continuous drain current (Id) of up to 6A at 25°C. The FDW2508PB boasts a low on-resistance of 18mOhm maximum at 6A and 4.5V Vgs, with a logic level gate feature for enhanced drivability. Key electrical characteristics include a gate charge (Qg) of 45nC maximum at 4.5V and an input capacitance (Ciss) of 3775pF maximum at 6V. The device is rated for a maximum power dissipation of 1W and operates across a wide temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in power management solutions for consumer electronics, industrial automation, and automotive systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 3775pF @ 6V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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