FDW2503N
MOSFET 2N-CH 20V 5.5A 8TSSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDW2503N is a dual N-channel MOSFET array from the PowerTrench® series, housed in an 8-TSSOP package. This device offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5.5A at 25°C. Featuring a logic level gate, it has a maximum on-resistance (Rds On) of 21mOhm at 5.5A and 4.5V. The MOSFET array exhibits a gate charge (Qg) of 17nC at 4.5V and an input capacitance (Ciss) of 1082pF at 10V. With a maximum power dissipation of 600mW, it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial automation. The FDW2503N is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 600mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1082pF @ 10V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 5.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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