FDW2502P
MOSFET 2P-CH 20V 4.4A 8TSSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDW2502P is a PowerTrench® series P-channel MOSFET array designed for efficient power management applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 4.4A at 25°C. With a low Rds On of 35mOhm at 4.4A and 4.5V Vgs, it minimizes conduction losses. The logic level gate functionality simplifies drive requirements. The FDW2502P is housed in an 8-TSSOP package, suitable for surface mount assembly and operates across a wide temperature range of -55°C to 150°C. Key electrical characteristics include a maximum Gate Charge (Qg) of 21nC at 5V and a maximum Input Capacitance (Ciss) of 1465pF at 10V. This component is commonly utilized in consumer electronics, industrial control, and battery management systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 600mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1465pF @ 10V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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