FDS9958-F085
MOSFET 2P-CH 60V 2.9A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi PowerTrench® FDS9958-F085 is a dual P-channel MOSFET array designed for demanding applications. This AEC-Q101 qualified component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.9A at 25°C. The device offers a low on-resistance (Rds On) of 105mOhm maximum at 2.9A and 10V, with a logic level gate for enhanced drive flexibility. Its input capacitance (Ciss) is a maximum of 1020pF at 30V, and gate charge (Qg) is 23nC at 10V. The FDS9958-F085 is housed in an 8-SOIC package for surface mounting and operates within an ambient temperature range of -55°C to 150°C. This component is suitable for automotive, industrial, and power management applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 30V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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