FDS9933BZ
MOSFET 2P-CH 20V 4.9A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDS9933BZ, a PowerTrench® series MOSFET array, features two P-channel transistors in a compact 8-SOIC package. This device is rated for a 20V drain-source voltage and a continuous drain current of 4.9A at 25°C, with a maximum on-resistance of 46mOhm at 4.9A and 4.5V Vgs. The logic-level gate enhancement allows for efficient drive with low gate voltage. Key parameters include a maximum power dissipation of 900mW, a gate charge Qg of 15nC at 4.5V, and input capacitance Ciss of 985pF at 10V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and power management solutions. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 985pF @ 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |