FDS8984-F40
MOSFET 2N-CH 30V 7A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS8984-F40 is a PowerTrench® MOSFET array featuring two N-channel transistors in an 8-SOIC package. This device offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7A at 25°C, with a maximum power dissipation of 1.6W. The Rds On is specified at 23mOhm at 7A and 10V. Key parameters include a gate charge (Qg) of 13nC at 10V and input capacitance (Ciss) of 635pF at 15V. With an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in power management, consumer electronics, and industrial automation. The component is supplied on a Tape & Reel (TR) for efficient automated assembly.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 635pF @ 15V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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