FDS8984-F085
MOSFET 2N-CH 30V 7A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi FDS8984-F085 is a PowerTrench® MOSFET array featuring two N-channel devices in an 8-SOIC package. This automotive-grade component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. The FDS8984-F085 boasts a low Rds On of 23mOhm at 7A and 10V, with a logic level gate for efficient drive. Key parameters include a maximum power dissipation of 1.6W, a gate charge (Qg) of 13nC at 10V, and an input capacitance (Ciss) of 635pF at 15V. Operating within a temperature range of -55°C to 150°C (TJ), this AEC-Q101 qualified component is suitable for applications in automotive and industrial power management. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 635pF @ 15V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
