FDS8978-F40
MOSFET 2N-CH 30V 7.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS8978-F40 is a dual N-channel MOSFET array from the PowerTrench® series. This device features a 30V drain-to-source voltage and can handle a continuous drain current of 7.5A at 25°C, with a maximum power dissipation of 1.6W. The MOSFET array is packaged in an 8-SOIC configuration suitable for surface mounting and is supplied on tape and reel. Key electrical characteristics include a typical gate charge of 26nC at 10V and input capacitance of 1270pF at 15V. The on-resistance (Rds On) is rated at a maximum of 18mOhm at 7.5A and 10V, with a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. This component is utilized in applications such as power management and load switching within the automotive and industrial sectors. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 1270pF @ 15V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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