FDS8960C
MOSFET N/P-CH 35V 7A/5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS8960C is a PowerTrench® MOSFET array featuring complementary N-channel and P-channel devices in an 8-SOIC package. This component offers a Drain to Source Voltage (Vdss) of 35V and continuous drain currents of 7A for the N-channel and 5A for the P-channel. Its optimized design includes a Logic Level Gate feature and a maximum Rds On of 24mOhm at 7A and 10V. Key parameters include a maximum power dissipation of 900mW, Gate Charge (Qg) of 7.7nC at 5V, and Input Capacitance (Ciss) of 570pF at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics and industrial power management. The device is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 35V |
| Current - Continuous Drain (Id) @ 25°C | 7A, 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 15V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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