FDS8958B
MOSFET N/P-CH 30V 6.4A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi PowerTrench® FDS8958B is a pre-biased MOSFET array featuring complementary N-channel and P-channel transistors. This component offers a 30V drain-source voltage rating with continuous drain currents of 6.4A for the N-channel and 4.5A for the P-channel, both specified at 25°C. The device exhibits a low on-resistance of 26mOhm at 6.4A and 10V Vgs. It incorporates a logic-level gate for enhanced drive flexibility and a maximum gate charge of 12nC. With an input capacitance of 540pF at 15V Vds, the FDS8958B is suitable for applications requiring efficient power switching. The 8-SOIC package (0.154", 3.90mm width) supports surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET array finds utility in various power management solutions within the automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A, 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 15V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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