FDS8958A-F085
MOSFET N/P-CH 30V 7A/5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDS8958A-F085 is a N-channel and P-channel MOSFET array from the PowerTrench® series, designed for efficient power switching applications. This AEC-Q101 qualified component features a 30V drain-to-source voltage rating and continuous drain current capabilities of 7A for the N-channel and 5A for the P-channel, both specified at 25°C. The device offers a low on-resistance of 28mOhm at 7A and 10V Vgs, with a logic level gate for reduced drive requirements. Typical applications include automotive power management and battery charging circuits. The MOSFET array is supplied in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include an input capacitance (Ciss) of 575pF (max) at 15V and a gate charge (Qg) of 16nC (max) at 10V. The maximum power dissipation is 900mW.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A, 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 15V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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