FDS8935
MOSFET 2P-CH 80V 2.1A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS8935 is a dual P-Channel MOSFET array from the PowerTrench® series, housed in an 8-SOIC package. This surface-mount component features a Drain-Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 2.1A at 25°C. The device offers a maximum power dissipation of 1.6W, with a typical Rds On of 183mOhm at 2.1A and 10V. Key electrical characteristics include a logic level gate, a maximum gate charge (Qg) of 19nC at 10V, and an input capacitance (Ciss) of 879pF at 40V. The operating temperature range is -55°C to 150°C. This MOSFET array is suitable for applications in consumer electronics, industrial control, and power management systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 879pF @ 40V |
| Rds On (Max) @ Id, Vgs | 183mOhm @ 2.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |