FDS8333C
MOSFET N/P-CH 30V 4.1A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS8333C is a PowerTrench® MOSFET array featuring complementary N-channel and P-channel transistors in a single 8-SOIC package. This device offers a 30V Drain-Source voltage rating with continuous drain currents of 4.1A for the N-channel and 3.4A for the P-channel, both specified at 25°C. It utilizes MOSFET technology with a logic level gate feature, characterized by a typical gate charge (Qg) of 6.6nC at 4.5V and an input capacitance (Ciss) of 282pF at 10V. The on-resistance (Rds On) is a maximum of 80mOhm at 4.1A and 10V. With a maximum power dissipation of 900mW and an operating temperature range of -55°C to 150°C, this component is suitable for applications in power management, battery charging, and consumer electronics. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A, 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 282pF @ 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 4.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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