FDS6990AS
MOSFET 2N-CH 30V 7.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS6990AS is a PowerTrench®, SyncFET™ dual N-channel MOSFET array. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 7.5A at 25°C. It offers a low Rds(On) of 22mOhm at 7.5A and 10V, with a maximum power dissipation of 900mW. The MOSFETs are designed with a logic level gate, exhibiting a Gate Charge (Qg) of 14nC maximum at 5V and an input capacitance (Ciss) of 550pF maximum at 15V. The threshold voltage (Vgs(th)) is a maximum of 3V at 1mA. This device is available in an 8-SOIC package, suitable for surface mounting. Its specifications make it suitable for applications in power management and high-efficiency switching circuits across various industrial and consumer electronics sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 15V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |