FDS6986AS
MOSFET 2N-CH 30V 6.5A/7.9A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS6986AS is a dual N-channel MOSFET array from the PowerTrench®, SyncFET™ series. This 2 N-channel device features a Drain-to-Source Voltage (Vdss) of 30V and continuous drain currents of 6.5A and 7.9A at 25°C. The MOSFET array offers a low Rds(on) of 29mOhm at 6.5A and 10V, complemented by a Logic Level Gate feature. Key parameters include a Gate Charge (Qg) of 17nC (Max) and Input Capacitance (Ciss) of 720pF (Max) at 10V. Rated for a maximum power dissipation of 900mW, it is supplied in a surface mount 8-SOIC package (0.154", 3.90mm Width) and is available in Cut Tape (CT). This component is utilized in applications such as power supply design and battery management. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A, 7.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 10V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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