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FDS6982AS

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FDS6982AS

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The onsemi FDS6982AS is a dual N-channel MOSFET array from the PowerTrench®, SyncFET™ series, housed in an 8-SOIC package. This component features a 30V Drain-Source Voltage (Vdss) and offers continuous drain current ratings of 6.3A and 8.6A at 25°C. Optimized for efficiency, it includes Logic Level Gate functionality and exhibits a maximum Rds(On) of 28mOhm at 6.3A (Vgs=10V). Key electrical parameters include a maximum Gate Charge (Qg) of 15nC and Input Capacitance (Ciss) of 610pF, both specified at 10V. With a maximum power dissipation of 900mW and an operating temperature range of -55°C to 150°C, this device is suitable for applications in power management, battery charging, and power supply units. The FDS6982AS is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max900mW
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.3A, 8.6A
Input Capacitance (Ciss) (Max) @ Vds610pF @ 10V
Rds On (Max) @ Id, Vgs28mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC

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