FDS6982AS
MOSFET 2N-CH 30V 6.3A/8.6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS6982AS is a dual N-channel MOSFET array from the PowerTrench®, SyncFET™ series, housed in an 8-SOIC package. This component features a 30V Drain-Source Voltage (Vdss) and offers continuous drain current ratings of 6.3A and 8.6A at 25°C. Optimized for efficiency, it includes Logic Level Gate functionality and exhibits a maximum Rds(On) of 28mOhm at 6.3A (Vgs=10V). Key electrical parameters include a maximum Gate Charge (Qg) of 15nC and Input Capacitance (Ciss) of 610pF, both specified at 10V. With a maximum power dissipation of 900mW and an operating temperature range of -55°C to 150°C, this device is suitable for applications in power management, battery charging, and power supply units. The FDS6982AS is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A, 8.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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