FDS6930B
MOSFET 2N-CH 30V 5.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi PowerTrench® FDS6930B is a dual N-channel MOSFET array designed for efficient power switching applications. This 2 N-channel device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 5.5A at 25°C. The MOSFET array offers a low Rds(On) of 38mOhm maximum at 5.5A and 10V Vgs, coupled with a logic level gate for enhanced drive flexibility. Key parameters include a gate charge (Qg) of 3.8nC maximum at 5V and an input capacitance (Ciss) of 412pF maximum at 15V. With a maximum power dissipation of 900mW, this component is housed in an 8-SOIC package (0.154" width) and supplied on tape and reel. The FDS6930B finds application in areas such as power management, battery charging, and general-purpose switching within consumer electronics and industrial systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 412pF @ 15V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 5.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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