FDS6911
MOSFET 2N-CH 20V 7.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS6911 is a dual N-channel PowerTrench® MOSFET array designed for efficient power management. This 20V device features a continuous drain current capability of 7.5A at 25°C and a low Rds(on) of 13mOhm at 7.5A and 10V. With a logic level gate, it offers enhanced drive flexibility. The FDS6911 boasts a maximum power dissipation of 900mW and is housed in an 8-SOIC package for surface mounting. Key electrical parameters include a gate charge (Qg) of 24nC (max) at 10V and input capacitance (Ciss) of 1130pF (max) at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET array finds application in various power switching and control circuits within the automotive and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 15V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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