FDS6910
MOSFET 2N-CH 30V 7.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS6910 is a PowerTrench® MOSFET array featuring two N-channel transistors within an 8-SOIC package. This device offers a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 7.5A at 25°C. With a maximum power dissipation of 900mW and a low Rds(On) of 13mOhm at 7.5A and 10V, it is suitable for power management applications. Key electrical characteristics include a Logic Level Gate, a maximum Gate Charge (Qg) of 24nC at 10V, and an input capacitance (Ciss) of 1130pF at 15V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics sectors. The FDS6910 is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 15V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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