FDS6900AS-G
MOSFET 2N-CH 30V 6.9A/8.2A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS6900AS-G is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component, part of the PowerTrench® and SyncFET™ series, features a Drain-Source Voltage (Vdss) of 30V and continuous drain currents of 6.9A and 8.2A at 25°C. The low on-resistance of 27mOhm at 6.9A and 10V Vgs, combined with a logic-level gate, optimizes performance in demanding power management solutions. Key electrical characteristics include a maximum gate charge (Qg) of 15nC at 10V and input capacitance (Ciss) of 600pF at 15V. Packaged in an 8-SOIC (0.154" width) for surface mounting and supplied on tape and reel, the FDS6900AS-G is suitable for use in various industries including consumer electronics and industrial automation. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A, 8.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 15V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA, 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
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