FDS6894AZ
MOSFET 2N-CH 20V 8A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDS6894AZ, a dual N-channel PowerTrench® MOSFET array, features a 20V drain-source voltage and 8A continuous drain current capability at 25°C. This surface mount component, housed in an 8-SOIC package, offers a low Rds(on) of 17mOhm at 8A and 4.5V Vgs, along with a logic-level gate for enhanced driving efficiency. With a maximum power dissipation of 900mW and a gate charge of 20nC @ 4.5V, it is suitable for applications requiring efficient switching and power management. The device operates across a temperature range of -55°C to 150°C. This component finds utility in various industrial and consumer electronic applications, including power supply circuits and motor control.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1455pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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