FDS6875
MOSFET 2P-CH 20V 6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi FDS6875 is a PowerTrench® MOSFET array featuring two P-channel transistors in a single 8-SOIC package. This device offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C, with a maximum on-resistance (Rds On) of 30mOhm at 6A and 4.5V Vgs. The logic level gate feature simplifies drive requirements. With a total power dissipation of 900mW, it is suitable for surface mount applications requiring efficient switching. Key parameters include a gate charge (Qg) of 31nC at 5V and input capacitance (Ciss) of 2250pF at 10V. The operating temperature range is -55°C to 150°C. This component is utilized in applications such as battery management, power switching, and motor control. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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