FDS4897AC
MOSFET N/P-CH 40V 6.1A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDS4897AC is a PowerTrench® MOSFET array featuring complementary N-channel and P-channel devices in a single 8-SOIC package. This component offers a Vdss of 40V with continuous drain currents of 6.1A for the N-channel and 5.2A for the P-channel at 25°C. The N-channel MOSFET exhibits a low on-resistance of 26mOhm maximum at 6.1A and 10V Vgs, with a typical gate charge of 21nC at 10V. The P-channel device also provides low on-resistance characteristics. Designed for surface mounting, this array is suitable for applications in power management, motor control, and general-purpose switching. The operating temperature range is -55°C to 150°C. This device is supplied on a Tape & Reel (TR).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A, 5.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1055pF @ 20V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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