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FDS4559-F085

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FDS4559-F085

MOSFET N/P-CH 60V 8SOIC

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

onsemi PowerTrench® series MOSFET array, FDS4559-F085, offers a dual N-channel and P-channel configuration. This component features a 60V Drain-to-Source voltage (Vdss) and supports continuous drain currents of 4.5A for the N-channel and 3.5A for the P-channel at 25°C. With a logic level gate, it provides efficient switching characteristics, specified with a maximum Rds(On) of 55mOhm at 4.5A and a 10V Vgs. The device is packaged in an 8-SOIC (0.154" width) for surface mounting and dissipates a maximum power of 2W. Key parameters include a maximum gate charge (Qg) of 18nC at 10V and input capacitance (Ciss) of 650pF at 25V. Qualified to AEC-Q101 and designed for automotive applications, this MOSFET array operates within a temperature range of -55°C to 150°C. The FDS4559-F085 is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V
Rds On (Max) @ Id, Vgs55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
GradeAutomotive
QualificationAEC-Q101

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onsemi’s core components include:

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  • FD / FDM series MOSFETs - discrete power transistors
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