FDS4559-F085
MOSFET N/P-CH 60V 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi PowerTrench® series MOSFET array, FDS4559-F085, offers a dual N-channel and P-channel configuration. This component features a 60V Drain-to-Source voltage (Vdss) and supports continuous drain currents of 4.5A for the N-channel and 3.5A for the P-channel at 25°C. With a logic level gate, it provides efficient switching characteristics, specified with a maximum Rds(On) of 55mOhm at 4.5A and a 10V Vgs. The device is packaged in an 8-SOIC (0.154" width) for surface mounting and dissipates a maximum power of 2W. Key parameters include a maximum gate charge (Qg) of 18nC at 10V and input capacitance (Ciss) of 650pF at 25V. Qualified to AEC-Q101 and designed for automotive applications, this MOSFET array operates within a temperature range of -55°C to 150°C. The FDS4559-F085 is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A, 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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