FDS3912
MOSFET 2N-CH 100V 3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS3912 is a PowerTrench® MOSFET array featuring two N-Channel enhancement mode transistors in a single 8-SOIC package. This surface-mount component offers a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 3A at 25°C. Key characteristics include a maximum Power Dissipation (Pd) of 900mW and a typical Rds On of 125mOhm at 3A and 10V, along with a logic-level gate feature. Gate Charge (Qg) is specified at a maximum of 20nC at 10V, and Input Capacitance (Ciss) is a maximum of 632pF at 50V. The device operates across a temperature range of -55°C to 175°C. This MOSFET array is commonly utilized in power management applications across various industries including consumer electronics, industrial automation, and automotive systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 632pF @ 50V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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