FDS3812
MOSFET 2N-CH 80V 3.4A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS3812 is a dual N-channel MOSFET array from the PowerTrench® series, housed in an 8-SOIC package. This surface-mount component offers a Drain to Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 3.4A at 25°C. Featuring a logic level gate, the FDS3812 provides a maximum On-Resistance (Rds On) of 74mOhm at 3.4A and 10V. Key electrical parameters include a maximum gate charge (Qg) of 18nC at 10V and an input capacitance (Ciss) of 634pF at 40V. The device has a maximum power dissipation of 900mW and operates across a temperature range of -55°C to 175°C. This MOSFET array is suitable for applications in power management, industrial automation, and consumer electronics. Supplied on Tape & Reel (TR).
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 634pF @ 40V |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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