FDS3601
MOSFET 2N-CH 100V 1.3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDS3601 is a PowerTrench® MOSFET array featuring two N-channel transistors in a surface-mount 8-SOIC package. This component offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.3A at 25°C. Designed with a logic level gate, it has a maximum gate charge (Qg) of 5nC at 10V and a maximum input capacitance (Ciss) of 153pF at 50V. The on-resistance (Rds On) is 480mOhm maximum at 1.3A and 10V. This device has a power dissipation of 900mW and operates across a temperature range of -55°C to 175°C. It is commonly utilized in power management applications across various industries. The FDS3601 is supplied in a Tape & Reel (TR) package.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 50V |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 1.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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