FDR8308P
MOSFET 2P-CH 20V 3.2A SUPERSOT-8Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDR8308P is a dual P-channel MOSFET array designed for high-efficiency switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.2A at 25°C. With a low Rds(on) of 50mOhm at 3.2A and 4.5V Vgs, it minimizes conduction losses. The logic level gate drive capability simplifies interfacing with microcontroller outputs. Key parameters include a maximum gate charge (Qg) of 19nC at 4.5V and an input capacitance (Ciss) of 1240pF at 10V. Packaged in a SuperSOT™-8 (8-LSOP) for surface mounting, this device dissipates up to 800mW and operates within an ambient temperature range of -55°C to 150°C. This MOSFET array is suitable for use in power management, battery charging, and mobile device applications.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-LSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
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