FDR8305N
MOSFET 2N-CH 20V 4.5A SUPERSOT-8Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDR8305N is a dual 2 N-Channel MOSFET array designed for efficient power management. This component features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) capability of 4.5A at 25°C. The low on-resistance of 22mOhm at 4.5A, 4.5V is achieved through its advanced MOSFET technology. With a logic level gate and a maximum gate charge (Qg) of 23nC at 4.5V, it offers enhanced switching performance. The SuperSOT™-8 package, also known as 8-LSOP, facilitates surface mounting and thermal dissipation with a maximum power rating of 800mW. This device is suitable for applications in consumer electronics and power supply designs. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-LSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
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