FDPC3D5N025X9D
MOSFET 2N-CH 25V 74A 12QFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi FDPC3D5N025X9D is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 25V and a continuous drain current (Id) of 74A at 25°C, with a maximum power dissipation of 26W. The low on-resistance of 3.01mOhm @ 18A, 10V, coupled with a gate charge (Qg) of 24nC @ 4.5V, ensures optimized switching performance. Encased in a 12-PQFN (3.3x3.3) package for surface mounting, it offers a compact footprint suitable for demanding thermal management. The operating temperature range is -55°C to 150°C (TJ). This MOSFET array is utilized in automotive, industrial power, and computing sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 12-PowerWQFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 26W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 74A |
| Input Capacitance (Ciss) (Max) @ Vds | 3340pF @ 13V |
| Rds On (Max) @ Id, Vgs | 3.01mOhm @ 18A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 12-PQFN (3.3x3.3) |
Request a Quote
Clients Also Buy
NVMFD5C446NWFT1G
MOSFET 2N-CH 40V 24A/127A 8DFN
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
NVMJD5D4N04CTWG
MOSFET N-CH 40V LFPAK56
