FDMS9600S
MOSFET 2N-CH 30V 12A 8MLP PWR56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi PowerTrench® FDMS9600S is a dual N-channel MOSFET array designed for efficient power switching applications. This component boasts a 30V drain-source voltage rating and supports continuous drain currents of 12A and 16A, with a low Rds(on) of 8.5mOhm at 12A and 10V. Featuring a logic-level gate, it offers enhanced drive flexibility. The device is housed in an 8-MLP (5x6) Power56 package, suitable for surface mounting and supplied on tape and reel. Key parameters include a maximum power dissipation of 1W, a gate charge of 13nC at 4.5V, and input capacitance of 1705pF at 15V. The operating temperature range is -55°C to 150°C. This MOSFET array finds application in power management, automotive, and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A, 16A |
| Input Capacitance (Ciss) (Max) @ Vds | 1705pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 12A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MLP (5x6), Power56 |
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