FDMS7620S-F106
MOSFET 2N-CH 30V 10.1A POWER56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMS7620S-F106 is a PowerTrench® MOSFET array featuring two N-channel devices configured as a half-bridge. This component offers a 30V drain-source voltage capability with a continuous drain current rating of 10.1A per channel at 25°C, peaking at 12.4A. The low on-resistance of 20mOhm at 10.1A and 10V gate-source voltage, coupled with a maximum power dissipation of 1W, makes it suitable for demanding applications. Key electrical parameters include a gate charge of 11nC (max) at 10V and input capacitance of 608pF (max) at 15V. The device is housed in an 8-PowerWDFN (Power56) package for surface mounting and is supplied on tape and reel. This MOSFET array is commonly utilized in power management solutions across automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A, 12.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 608pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Power56 |
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