FDMS3668S
MOSFET 2N-CH 30V 13A/18A POWER56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi's FDMS3668S is a dual N-channel MOSFET array from the PowerTrench® series, designed for efficient power management applications. This device features a 30V drain-source voltage (Vdss) and offers continuous drain currents of 13A and 18A at 25°C for its two channels. The MOSFET array is built with advanced MOSFET technology, boasting a low Rds(on) of 8mOhm at 13A and 10V. Key characteristics include a logic level gate, a maximum gate charge (Qg) of 29nC at 10V, and an input capacitance (Ciss) of 1765pF maximum at 15V. Packaged in an 8-PowerTDFN (Power56) configuration, this component is suitable for surface mounting and operates within a temperature range of -55°C to 150°C. The FDMS3668S is utilized in industries such as automotive, computing, and industrial power supplies.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A, 18A |
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | Power56 |
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