FDMS3660S-F121
MOSFET 2N-CH 30V 13A/30A POWER56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi PowerTrench® FDMS3660S-F121 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 30V drain-source voltage rating and offers asymmetrical current capabilities of 13A and 30A continuous drain current at 25°C. With a low Rds(on) of 8mOhm at 13A and 10V Vgs, it minimizes conduction losses. The Logic Level Gate feature enhances compatibility with lower voltage gate drivers. Key parameters include a maximum gate charge of 29nC and input capacitance of 1765pF. Packaged in an 8-PowerTDFN (Power56) for surface mounting, this MOSFET array is supplied on tape and reel. It finds application in power management, automotive, and industrial systems where efficient power conversion is critical.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A, 30A |
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | Power56 |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
