FDMS3660AS
MOSFET 2N-CH 30V 13A/30A POWER56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi FDMS3660AS is a PowerTrench® series dual N-channel MOSFET array designed for demanding applications. This device offers a Drain-Source Voltage (Vdss) of 30V and continuous drain current ratings of 13A and 30A at 25°C for the two channels, respectively. Featuring a logic-level gate, it provides optimized switching performance with a maximum Rds(On) of 8mOhm at 13A and 10V. The device boasts a low gate charge (Qg) of 30nC maximum at 10V and an input capacitance (Ciss) of 2230pF maximum at 15V. Housed in an 8-PowerTDFN (Power56) package for surface mounting, this MOSFET array operates across a wide temperature range of -55°C to 150°C (TJ) and dissipates up to 1W. It is commonly found in power management and control circuits across industries such as automotive and industrial automation. Packaged in Tape & Reel (TR).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A, 30A |
| Input Capacitance (Ciss) (Max) @ Vds | 2230pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | Power56 |