FDMS3626S
MOSFET 2N-CH 25V 17.5/25A PWR56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMS3626S is a PowerTrench® series dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a 25V drain-source breakdown voltage, with continuous drain currents of 17.5A and 25A for the two channels, respectively. The low Rds(on) of 5mOhm at 17.5A and 10V gate drive, combined with a logic level gate, facilitates efficient switching and reduced power dissipation. Key parameters include a maximum gate charge of 26nC at 10V and input capacitance of 1570pF at 13V. Housed in an 8-PowerTDFN (Power56) package, it is suitable for surface mount assembly and operates across a temperature range of -55°C to 150°C. This device finds application in areas such as automotive power systems and industrial motor control.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 17.5A, 25A |
| Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 13V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 17.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | Power56 |
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