FDMS3620S
MOSFET 2N-CH 25V 17.5A/38A PWR56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi PowerTrench® FDMS3620S is a 25V, dual N-channel MOSFET array in a Power56 package. This asymmetrical configuration offers continuous drain currents of 17.5A and 38A at 25°C. Key electrical characteristics include a low Rds(On) of 4.7mOhm at 17.5A and 10V, a gate charge (Qg) of 26nC maximum at 10V, and an input capacitance (Ciss) of 1570pF maximum at 13V. Featuring a logic level gate, this MOSFET array is designed for efficient power management applications, including automotive, industrial, and computing systems. The device operates over a wide temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 17.5A, 38A |
| Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 13V |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 17.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | Power56 |
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