FDMS3602S-P
MOSFET 2N-CH 25V 15A/30A 8PQFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDMS3602S-P is a 25V, dual N-channel MOSFET array designed for high-efficiency power switching applications. This MOSFET array offers a continuous drain current of 15A (Ta) and 30A (Tc), with pulsed current capabilities reaching 26A (Ta) and 40A (Tc). Featuring a low Rds(On) of 5.6mOhm at 15A and 10V, alongside a gate charge of 27nC (max) at 10V, it minimizes conduction and switching losses. The device is packaged in an 8-PQFN (5x6) surface mount configuration, enabling compact board designs. Key parameters include an input capacitance (Ciss) of 1680pF (max) at 13V and a threshold voltage (Vgs(th)) of 3V. Operating across a temperature range of -55°C to 150°C (TJ), the FDMS3602S-P is suitable for use in power supplies, battery management systems, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W (Ta), 2.5W (Ta) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 13V, 4120pF @ 13V |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V, 64nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA, 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |