FDMS1D2N03DSD
MOSFET 2N-CH 30V 19A/70A 8PQFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMS1D2N03DSD is a PowerTrench® dual asymmetrical N-channel MOSFET array housed in an 8-PQFN (5x6) package, supplied on tape and reel. This device features a 30V drain-source voltage rating. It offers distinct performance characteristics for each channel, with continuous drain current capabilities of 19A (Ta) and 70A (Tc) for the first channel, and 37A (Ta) and 164A (Tc) for the second channel. The on-resistance for the first channel is specified as 3.25mOhm at 19A, 10V, while the second channel exhibits 0.97mOhm at 37A, 10V. Maximum power dissipation is 2.1W (Ta) and 26W (Tc) for the first channel, and 2.3W (Ta) and 42W (Tc) for the second channel. Gate charge (Qg) is 33nC and 117nC respectively, with threshold voltages (Vgs(th)) of 2.5V and 3V. Input capacitance (Ciss) is 1410pF and 4860pF. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1410pF @ 15V, 4860pF @ 15V |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V, 117nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 320µA, 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
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