FDMS001N025DSD
MOSFET 2N-CH 25V 19A 8PQFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMS001N025DSD is a PowerTrench® dual N-channel MOSFET array featuring an asymmetrical configuration. This device offers a 25V drain-source voltage (Vdss) and supports continuous drain currents of 19A at 25°C ambient and up to 165A at 25°C case temperature. The low on-resistance is specified as 3.25mOhm at 19A, 10V and 0.92mOhm at 38A, 10V. Key parameters include input capacitance (Ciss) up to 5105pF at 13V and gate charge (Qg) up to 104nC at 10V. With a maximum power dissipation of 42W at 25°C case temperature, this MOSFET array is suitable for applications requiring efficient power switching. The component is housed in an 8-PQFN (5x6) surface mount package and operates within a temperature range of -55°C to 150°C. This device finds application in power management solutions, automotive systems, and industrial power conversion.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 13V, 5105pF @ 13V |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 19A, 10V, 0.92mOhm @ 38A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V, 104nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 320µA, 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
| Grade | - |
| Qualification | - |
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