FDMJ1032C
MOSFET N/P-CH 20V 3.2A/2.5A SC75Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMJ1032C is a PowerTrench® MOSFET array featuring N and P-channel configurations. This device offers a 20V drain-source voltage rating and continuous drain currents of 3.2A for the N-channel and 2.5A for the P-channel. It utilizes MOSFET technology and is housed in an 8-pin SC-75, MicroFET package suitable for surface mounting. Key electrical characteristics include a maximum Rds(On) of 90mOhm at 3.2A and 4.5V Vgs, a Vgs(th) of 1.5V at 250µA, and a gate charge of 3nC at 4.5V. Input capacitance (Ciss) is a maximum of 270pF at 10V. With a maximum power dissipation of 800mW, it operates across a temperature range of -55°C to 150°C. This component is commonly employed in battery management, power switching, and portable electronics applications.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-75, MicroFET |
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