FDMD8580
MOSFET 2N-CH 80V 16A/82A PWR56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMD8580 is a PowerTrench® series dual N-channel MOSFET array with a Drain-to-Source Voltage (Vdss) of 80V. This device offers a continuous drain current (Id) of 16A at 25°C ambient temperature and 82A at 25°C case temperature. Its low on-resistance is 4.6mOhm maximum at 16A and 10V gate-to-source voltage. The FDMD8580 features a gate charge of 80nC maximum at 10V and input capacitance of 5875pF maximum at 40V. Packaged in an 8-PowerWDFN (Power56) for surface mounting, this MOSFET array is suitable for applications in power management and industrial automation. Operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.3W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 82A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 5875pF @ 40V |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 16A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | Power56 |
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